page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures suitable for af - driver stages and low power output stages complement to bc818 bc8 08 - 16 bc8 08 - 25 bc8 08 - 40 5e 5f 5g maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo - 3 0 v d col l ector - emitter v o l t age v ceo - 2 5 v emitter - base v o l t a g e v ebo - 5 v col l ector cur re n t - conti n u o us i c 8 0 0 m a col l ector p o w e r dissi p a t i on p c 3 0 0 m w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 u nless otherwise specified) parame t er symbol t est conditions m i n t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = - 10 0 a, i e =0 - 30 v collector - emitter bre a kd o w n v ol t age v ceo i c = - 10 ma, i b =0 - 25 v emitter - ba s e breakd o w n v o l t age v ebo i e = - 100 a, i c =0 - 5 v collector cut - off current i cbo v cb = - 25 v , i e =0 - 0.1 a emitter cut - off current i ebo v eb = - 4 v , i c =0 - 0.1 a dc cur r ent gain h fe(1) v ce = - 1 v , i c = - 100 ma 100 630 h fe(2) v ce = - 1 v , i c = - 300 ma 60 collecto r - emitter satu r ation v o l t age v ce(sat) i c = - 500 ma, i b = - 50 ma - 0.7 v base - emitter v o l t age v be v ce = - 1 v , i c = - 300 ma - 1.2 v t r a n s ition fr e qu e n c y f t v ce = - 5 v , i c = - 10 ma, f= 50 mhz 100 mhz collector output ca p aci t ance c ob v cb = - 10 v , i e =0 , f= 1 mhz 12 pf classification of h fe rank 5 e 5 f 5 g range 100 - 250 160 - 400 250 - 630 ( pn p ) ( pn p ) ( pn p ) 1. base 2. emitter sot - 23 3. collecto bc808-16 BC808-25 bc808-40
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteristics bc808-16 BC808-25 bc808-40
|
